Infineon IPAN80R280P7XKSA1 80mΩ 800V CoolMOS™ Power Transistor for High-Efficiency Applications
The demand for high-efficiency power conversion systems continues to grow across industries such as renewable energy, industrial motor drives, and consumer electronics. To meet these demands, power semiconductor technology must evolve, offering lower losses, higher switching frequencies, and improved thermal performance. The Infineon IPAN80R280P7XKSA1 stands out as a leading solution in this space, leveraging advanced CoolMOS™ technology to deliver exceptional efficiency and reliability in high-voltage applications.
This power transistor is characterized by an ultra-low on-state resistance (RDS(on)) of just 80mΩ and a high breakdown voltage of 800V. These properties make it particularly suitable for high-power and high-frequency switching applications where minimizing conduction and switching losses is critical. The reduced RDS(on) directly translates to lower power dissipation during operation, which enhances overall system efficiency and reduces the need for complex cooling mechanisms.
Built on Infineon’s proprietary Superjunction technology, the IPAN80R280P7XKSA1 offers superior switching performance and avalanche ruggedness. This technology enables the device to operate at elevated switching frequencies without compromising efficiency, allowing designers to reduce the size of passive components such as inductors and capacitors. Consequently, this leads to more compact and cost-effective power supply designs.
Another key advantage of this CoolMOS™ transistor is its enhanced thermal performance and long-term reliability. The package is optimized for efficient heat dissipation, supporting continuous operation under high-stress conditions. This makes the device ideal for use in solar inverters, server power supplies, electric vehicle charging systems, and industrial SMPS (Switched-Mode Power Supplies).
Furthermore, the device incorporates features such as fast body diode recovery and low gate charge, which contribute to reduced electromagnetic interference (EMI) and simpler gate driving circuit design. These attributes are essential for achieving compliance with international energy efficiency standards and for ensuring stable operation across a wide range of loads.
In summary, the Infineon IPAN80R280P7XKSA1 exemplifies the innovation in modern power semiconductor design, addressing the need for higher efficiency, power density, and robustness in next-generation electronic systems.
The Infineon IPAN80R280P7XKSA1 combines ultra-low conduction losses, high voltage capability, and excellent thermal behavior, making it a top choice for high-efficiency and high-frequency power conversion applications.
Keywords:
High-Efficiency, Ultra-Low RDS(on), CoolMOS™ Technology, 800V Breakdown, Fast Switching
