Infineon IPB110N20N3LFATMA1 OptiMOS 3 Power MOSFET: Key Features and Applications

The Infineon IPB110N20N3LFATMA1 is a member of the high-performance OptiMOS™ 3 family, representing a robust N-channel power MOSFET engineered for efficiency and reliability in demanding applications. This device is characterized by its exceptionally low on-state resistance (RDS(on)) of just 1.1 mΩ (max. at VGS = 10 V), which is a cornerstone of its design. This ultra-low resistance directly translates to minimal conduction losses, enabling higher efficiency and reducing the need for extensive thermal management.

Operating with a drain-source voltage (VDS) of 200 V and a continuous drain current (ID) of 110 A, this MOSFET is built to handle significant power levels. Housed in a TO-Leadless (TOLL) package, the component offers a compact footprint that is ideal for space-constrained modern electronics. This package also provides superior thermal performance, allowing for efficient heat dissipation from the top side, which is crucial for maintaining device reliability under high-stress conditions.

A key advantage of the OptiMOS™ 3 technology platform is its outstanding switching performance. The device features low gate charge (Qg) and low effective output capacitance (Coss(eff)), which collectively contribute to reduced switching losses. This makes it particularly suitable for high-frequency switching circuits, enabling designers to create smaller, lighter, and more efficient power systems.

The combination of these attributes opens the door to a wide array of applications. Primarily, it is an excellent choice for synchronous rectification in switched-mode power supplies (SMPS), including server and telecom power units. Its high current handling and efficiency also make it ideal for DC-DC converters and motor control systems in industrial automation, robotics, and electric mobility solutions. Furthermore, it can be effectively used in solar inverters and battery management systems where high efficiency and reliability are paramount.

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In summary, the Infineon IPB110N20N3LFATMA1 stands out for its ultra-low RDS(on), excellent thermal performance in a compact package, and superior switching characteristics, making it a top-tier solution for high-power, high-frequency applications.

Keywords: Low RDS(on), High Efficiency, TOLL Package, Synchronous Rectification, Power Conversion.