Infineon IPP60R120P7: A High-Performance Superjunction MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. At the forefront of this innovation is Infineon's CoolMOS™ P7 series, with the IPP60R120P7 standing out as a premier superjunction (SJ) MOSFET engineered to meet these challenges. This device exemplifies a significant leap forward in performance for a wide array of power conversion applications, including switch-mode power supplies (SMPS), server and telecom power systems, and industrial motor drives.

A key metric for any power MOSFET is its specific on-state resistance, denoted as R DS(on). The IPP60R120P7 boasts an exceptionally low typical R DS(on) of just 120 mΩ at a drain-source voltage (V DS) of 600 V. This ultra-low resistance is a direct benefit of the advanced superjunction technology, which enables a much better relationship between on-state losses and breakdown voltage compared to traditional planar MOSFETs. The result is a significant reduction in conduction losses, which directly translates into higher overall system efficiency and reduced heat generation.

Beyond static losses, switching performance is paramount, especially in high-frequency circuits. The IPP60R120P7 is designed for superior switching behavior and high ruggedness. It features very low gate charge (Q G) and low effective output capacitance (C OSS(eff)), which are crucial for minimizing switching losses. Faster switching speeds allow for the use of higher frequencies, which in turn enables the design of smaller and lighter magnetic components and filters. Furthermore, the P7 technology incorporates enhanced body diode robustness, offering improved performance in hard-switching and inductive load conditions, a critical factor for reliability.

The device also incorporates a highly avalanche rugged design, ensuring it can handle unexpected voltage spikes and stressful conditions that occur in real-world applications. This intrinsic ruggedness enhances the system's reliability and longevity, reducing the risk of field failures. Packaged in the industry-standard TO-220 package, the IPP60R120P7 offers excellent thermal performance and is easy to integrate into existing designs, providing a perfect balance between high performance and practical manufacturability.

ICGOOODFIND: The Infineon IPP60R120P7 is a benchmark superjunction MOSFET that masterfully balances ultra-low conduction losses, exceptional switching performance, and high application ruggedness. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: Superjunction MOSFET, Low R DS(on), High Efficiency, Switching Performance, Avalanche Rugged