Infineon IPD70P04P4L-08: High-Performance P-Channel Power MOSFET for Advanced Automotive and Industrial Applications

The demand for highly efficient, robust, and compact power management solutions continues to grow across the automotive and industrial sectors. Addressing this need, Infineon Technologies introduces the IPD70P04P4L-08, a state-of-the-art p-channel power MOSFET engineered to deliver exceptional performance and reliability in demanding applications. This device stands out by offering a unique combination of low on-state resistance, high current handling capability, and superior switching characteristics, making it an ideal choice for modern electronic systems.

A key feature of the IPD70P04P4L-08 is its extremely low typical on-state resistance (RDS(on)) of just 7.0 mΩ at a gate-source voltage of -10 V. This low resistance minimizes conduction losses, leading to higher overall system efficiency and reduced heat generation. The MOSFET is designed to handle a continuous drain current (ID) of -70 A and a pulsed drain current (IDM) of up to -280 A, providing ample current capability for high-power load switching in applications such as DC motor control, solenoid drivers, and high-current power distribution systems.

The device is housed in Infineon’s proprietary SuperSO8 package, which offers a compact footprint and excellent thermal performance. This advanced packaging technology ensures efficient heat dissipation, allowing the MOSFET to operate reliably at high power levels and elevated ambient temperatures. Furthermore, the IPD70P04P4L-08 is AEC-Q101 qualified, guaranteeing that it meets the stringent quality and reliability standards required for automotive electronics. This makes it perfectly suited for use in various automotive systems, including electric power steering (EPS), transmission control units (TCUs), and battery management systems (BMS).

In industrial environments, the MOSFET excels in power supplies, load switches, and motor drives, where its high robustness and avalanche ruggedness ensure stable operation under stressful conditions such as voltage spikes and inductive load switching. The p-channel configuration also simplifies circuit design in high-side switch applications by allowing direct drive from logic-level controllers without the need for additional charge pump circuits, thus reducing component count and system cost.

ICGOOODFIND: The Infineon IPD70P04P4L-08 is a top-tier p-channel MOSFET that sets a high standard for power switching components. Its blend of ultra-low RDS(on), high current capacity, and automotive-grade reliability makes it a superior solution for designers aiming to enhance efficiency and durability in next-generation automotive and industrial systems.

Keywords:

P-Channel MOSFET

Automotive Grade

Low RDS(on)

High Current Switching

SuperSO8 Package