Infineon IPB60R299CPAATMA1 CoolMOS™ Power Transistor: Datasheet, Application Notes, and Technical Specifications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics is a defining challenge for modern designers. Infineon Technologies addresses these demands head-on with its advanced CoolMOS™ CFD7 series, with the IPB60R299CPAATMA1 standing out as a premier 600 V superjunction (SJ) MOSFET engineered for exceptional performance in demanding applications.

This article provides a detailed overview of this power transistor, covering its key technical specifications, essential application notes, and the critical information found within its datasheet.

Technical Specifications and Datasheet Highlights

The datasheet for the IPB60R299CPAATMA1 reveals a device optimized for high-efficiency switching. Its core specifications establish its performance envelope:

Breakdown Voltage (V_DS): 600 V, making it suitable for mains-powered applications (e.g., 230 VAC systems).

On-State Resistance (R_DS(on)): A remarkably low 299 mΩ (max. at 25°C, V_GS = 10 V). This low resistance is the primary source of its high efficiency, minimizing conduction losses.

Package: Housed in the TO-263-3 (D2PAK) surface-mount package (IPB), which offers an excellent balance between power handling capability, creepage distance, and footprint on the PCB.

Gate Threshold Voltage (V_GS(th)): Typically 3.5 V, which is crucial for designing robust gate drive circuits.

Total Gate Charge (Q_g): 21 nC (typ.). This low gate charge enables very fast switching speeds and reduces driving losses, a key feature of the CoolMOS™ technology.

A critical advantage of the CFD7 series, detailed in the datasheet, is the integrated fast body diode. This feature enhances robustness in hard-switching and inductive load applications, improving reliability in scenarios like zero-voltage switching (ZVS) topologies and providing superior reverse recovery characteristics.

Key Application Notes

Understanding the datasheet parameters is essential for successful implementation. Here are vital application considerations:

1. Gate Driving: While the low Q_g simplifies driving, a properly designed gate driver circuit is mandatory. A low-inductance layout and a driver capable of delivering several amps of peak current are recommended to achieve fast switching transitions and avoid parasitic turn-on.

2. Thermal Management: Despite its high efficiency, managing heat is critical. The D2PAK package is designed to be mounted on a PCB copper area that acts as a heatsink. Proper PCB layout with adequate thermal vias and, if necessary, an external heatsink is required to keep the junction temperature within safe limits, ensuring long-term reliability.

3. Target Applications: The IPB60R299CPAATMA1 is ideally suited for a wide range of high-efficiency SMPS (Switch-Mode Power Supplies) and other power conversion stages, including:

Server & Telecom Power Supplies (PSUs)

Industrial Motor Drives and Control

Power Factor Correction (PFC) stages (both boost and totem-pole configurations)

Solar Inverters and UPS Systems

Lighting (e.g., high-power LED drivers)

4. Layout Considerations: High-frequency switching demands a careful PCB layout. The critical loop (from input capacitor to MOSFET to ground) must be as small as possible to minimize parasitic inductance, which causes voltage spikes and electromagnetic interference (EMI).

ICGOOODFIND

The Infineon IPB60R299CPAATMA1 represents a high-efficiency solution for modern power conversion. Its standout features—extremely low R_DS(on), low gate charge, the robust TO-263-3 package, and the integrated fast body diode—make it an exceptional choice for designers aiming to maximize power density and efficiency in industrial, computing, and renewable energy applications. By adhering to the application notes concerning gate driving and thermal management, engineers can fully leverage the capabilities of this advanced CoolMOS™ transistor.

Keywords:

CoolMOS™ CFD7

600V Superjunction MOSFET

Low R_DS(on)

Fast Body Diode

TO-263-3 Package